GaAs wafer(SI, SC type) ▶ Characteristic - GaAs electron mobility is around six times that of silicon - Higher speeds are also indirectly realized from the larger GaAs - band gap (1.424eV) vs. that of Si(1.1eV); this results - in reduced parasitic capacitance within the device. - These properties make GaAs devices ideal candidates - for high frequency and high-temp..