|
GaAs wafer(SI, SC type)
▶ Characteristic
- GaAs electron mobility is around six times that of silicon
- Higher speeds are also indirectly realized from the larger GaAs
- band gap (1.424eV) vs. that of Si(1.1eV); this results
- in reduced parasitic capacitance within the device.
- These properties make GaAs devices ideal candidates
- for high frequency and high-temperature applications in
- broadband telecommunications, data and optical
- communications, and for solar cells. |
| ▶ Application: |
|
- aerospace and military applications
- : Their ability to operate at very high frequencies and power despite extreme temperatures
- and radiation was required
- high volume commercial applications
- : cellular phones and other wireless applications, which require operating frequencies
- that are difficult to achieve with silicon-based devices.
- GaAs optoelectronic devices |
|
| ▶ Specification |
|
|
Type1 |
Semi-Insulating(SI) |
Semi-Conducting(SC) |
|
Dopant |
Undopped |
P(Zn) / N(Si, Te) |
|
Diameter |
2", 3", 4" |
2", 3", 4" |
|
Orientation |
100, 110 |
100, 110 |
|
Resistivity |
>1E7 ohm |
>1E-3 ohm |
|
Hall Mobility |
>6000 |
>1500 |
|
Carrier Concentration |
- |
<5E4 |
|
Etch Pit Density |
<10000 |
<5e4(2"),<1e5(3"),<1.5e5(4”) |
|
Thickness |
625±25um(2")
625±25um(3")
625±25um(4") |
350~650±20um(2")
500~625±25um(3")
500~625±25um(4") |
|
Surface |
One side polished |
One side polished |
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