Permanent Epoxy Negative Photoresist
Lift Off Resists, Positive And Ebeam Resists,
* SU-8 Negative Epoxy Series Resists
*PMMA Series***
* AZ series, AZ5214E , AZ 4620 , AZ 1512 , AZ 300MIF, AZ Thinner
* Positive PR Stripper *Positive Resist Remover *Negative Resist Remover
*
Buffered Oxide Etchant (B.O.E) : (#6:1.#7:1.#30:1)
* ITO Etchant(LCE-12) *ITO Etchant TE100
* AL Etchant #A #D #F
AL Etchant #TFG * * AL Etchant (AL11,AL12S)
*CU Etchant #49-1 APS-100 * CR Etchant #905N #473 NI Etchant #TFB #TFG
*Gallium Arsenide Etchant *Gallium Nitride Etchant *Gallium Phosphide Etchant
*Gold Etchant #TFA #8148 #8110 *Gold/Silver Etchant *Iron Oxide Mask Etchant
*Moly Etchant #TFM *Nichrom Etchant *Nickle Vanadium Etchant
*Pd Etchant *SIO2 Etchant *Solar Cell Etchant *W Etchant #TFW
*TantaiumEtchant *Ti Etchant #TFT #TFW *W Etchant #TFW
Etchant/Metal Compatibility Chart
Click on an item for more detailed information
|
THIN FILM |
TRANSENE ETCHANTS |
OPERATING RANGE |
RECOMMENDED RESIST |
APPLICATION |
|---|---|---|---|---|
| Al | ALUMINUM ETCHANTS TYPE A TYPE D TYPE F |
@25 °C @ 40 °C 30 Å/sec 80 Å/sec 40 Å/sec 125 Å/sec 30 Å/sec 80 Å/sec |
Negative & Positive |
Semiconductor & Integrated Circuits GaAs & GaP Devices AlSi Materials |
| Al2O3 | TRANSETCH N | 120 Å/min @ 180 °C | SiO2 | Semiconductor Devices |
| BOE | BUFFERED OXIDE ETCHANT | Variable | Negative | Semiconductor & Integrated Circuits |
| Cr | CHROMIUM ETCHANTS
1020 |
@ 40 °C 40 Å/sec 32 Å/sec |
Negative & Positive |
Thin Film Circuits Chrome Mask |
| Cr-Si Cr-SiO |
CHROMIUM ETCHANT TFE | 1000 Å/min @ 50 °C | Negative | Thin Film Circuits |
| Cu | COPPER ETCHANTS CE-100 CE-200 APS-100 Copper Etch 49-1 Copper Etch BTP |
1 mil/min @ 40 °C 0.5 mil/min @ 40 °C 80 Å/sec @ 40 °C 22 Å/sec @ 30 °C 150 Å/sec @ 30 °C |
Screen Resists Positive & Negative Negative |
P.C.Boards Thin Film Circuits Ni Compatability Ni Compatability |
| GaAs | GALLIUM ARSENIDE GA ETCH 100 GA ETCH 200 GA ETCH 300 AB ETCH |
100 Å/sec @ 40 °C 20 Å/sec @ 5 °C 22 Å/sec @ 25 °C Defect Delineation |
Negative | Microelectronic Circuits Semiconductor Testing |
| GaN | GALLIUM NITRIDE |
80 A/min | SiO2 | LED |
| Ga2O3 | GALLIUM OXIDE | 10 Å/sec @ 25 °C | Negative | Microelectronic Circuits |
| GaP | GALLIUM PHOSPHIDE | A Face(Ga): 115 micron/hr @ 80 °C B Face (P): 210 micron/hr @ 80 °C |
Negative | Light Emitting Diodes |
| Ge | GERMANIUM | 250 Å/sec @ 20 °C |
Negative |
Semiconductor Devices |
| Au | GOLD ETCHANTS TFA TFAC GE-8148 GE-8110 GE-8111 |
28 Å/sec @ 25 °C 30 Å/sec @ 60 °C 50 Å/sec @ 25 °C 15 Å/sec @ 25 °C 15 Å/sec @ 25 °C |
Neg and Pos Negative Neg and Pos Neg and Pos Neg and Pos |
Thin Film Circuits GaAs compatible Ni compatible Ni compatible Ni compatible |
| Hf, HfO | HAFNIUM, HAFNIUM OXIDE | 45 Å/sec @ 25 °C ALD HfO 7.5 Å/sec |
Negative | Use Titanium Etch TFT |
| In2O3 ITO |
INDIUM OXIDE INDIUM TIN OXIDE |
15 Å/sec @ 25 °C | Negative | Microelectronic Circuits |
| InP | INDIUM PHOSPHIDE | 30 mins @ 25 °C | Negative | Microelectronic Circuits |
| Fe2O3 | IRON OXIDE MASK ETCHANT ME-10 ME-30 |
50 Å/sec @ 25 °C 25 Å/sec @ 25 °C |
Negative & Positive |
Microelectronic Circuits |
| Polyimide | KAPTON POLYIMIDE ETCHANT |
0.013 mil/min @ 40 °C 0.07 mil/min @ 60 °C |
Negative | Polyimide/Copper Clad Laminates |
| MgO | Magnesium Oxide Etchant MgOX12 | 40 Å/sec @ 30°C | Negative & Positive |
|
| Mo | MOLY ETCHANT TFM | 55 Å/sec @ 30 °C 85 Å/sec @ 60 °C |
Negative | Microelectronic Circuits |
| Nb NbN NbO |
Niobium Niobium Nitride Niobium Oxide |
50Å / sec @ 25 oC | Negative |
Microelectronics |
| Ni-Cr | NICHROME ETCHANTS
TFN |
50 Å/sec @ 40 °C |
Negative & Positive | Thin Film Circuits |
| Ni | NICKEL ETCHANTS TFB TFG Type I |
30 Å/sec @ 25 °C 50 Å/sec @ 40 °C 3 mil/hr @ 40 °C |
Negative & Positive | Thin Film Circuits |
| Ni-V | Nickel-Vanadium Etch |
30 Å/sec @ 20 °C | Negative&Positive | Microelectronics |
| Pd | PALLADIUM ETCHANTS
TFP |
110 Å/sec @ 50 °C | Negative & Positive | Semiconductor & Thin Film Circuits |
| Pd | PALLADIUM ETCHANT
EC |
Electrochemical Etching | ||
| REAGENT SEMICONDUCTOR ETCHANTS (RSE) | ||||
| Ru | RUTHENIUM ETCH |
20 Å/sec @ 20 °C | Negative&Positive | Microelectronics |
| SEMICONDUCTOR DEFECT DELINEATION ETCHANTS | ||||
| Si | REAGENT SEMICONDUCTOR ETCHANTS (RSE) SILICON SLOW ETCH
SILICON MESA ETCH PREFERENTIAL SILICON ETCHANTS WRIGHT-JENKINS ETCHANT SIRTL ETCHANT |
Variable
Variable Variable 1 mil/3 min @ 100 °C 1 hr @ 75-100 °C Defect Characterization |
KMER PKP Type I
<110> <100> N/A |
Semiconductor Devices
Semiconductor |
| SiC | SILICON CARBIDE | 80 Å/min | Negative | LED |
| SiO2 | BUFFER HF IMPROVED BD ETCHANT TIMETCH SILOX VAPOX III AIPAD Etch 639 BUFFERED OXIDE ETCHANTS (BOE) |
800Å/min @ 25 °C Thermally Grown Variable 90 Å/min @ 25 °C 4000 Å/min @ 22 °C 5000 Å/min Variable |
Negative | Semiconductor & Integrated Circuits PSG/BSG
CVD |
| SiO | SILICON MONOXIDE ETCH |
5000 Å/min @ 85 °C | Negative | Semiconductor Devices |
| Si3N4 | TRANSETCH N | 125 Å/min @ 180 °C | SiO2 (Silox) | Semiconductor & Integrated Circuits |
| Ag | SILVER ETCHANT TFS | 200 Å/sec @ 25 °C | Negative & Positive | Semiconductor & Thin Film Circuits |
| Stainless Steel | Nickel Etch Type I | 45 Å/sec @ 25 °C, AISI 316 | Negative & Positive | Alloys |
| Ta Ta3N5 Ta2O5 |
SIE-8607 Ta Etch 111 |
70 Å/sec @ 25 °C 30 Å/sec @ 25 °C |
Negative & Positive | Capacitors Semiconductors |
| TaSi | Tantalum Silicide Etch |
50 Å/sec @ 20 °C | Negative&Positive | Thin Film Electronics |
| Sn, SnO | Tin, Tin Oxide | 15 Å/sec @ 25 °C | Negative | Microelectronic Circuits |
| Ti | TITANIUM ETCHANTS TFT TFTN |
25 Å/sec @ 20 °C 50 Å/sec @ 30 °C 10 Å/sec @ 70 °C 50 Å/sec @ 85 °C |
Negative Positive |
Integrated Circuits SiO2 Compatible |
| TiN | Titanium Nitride Etch |
30 Å/sec @ 20 °C | Negative | Microelectronics |
| Ti-W | TI-TUNGSTEN ETCHANT TiW-30 | 20-30 Å/sec | Negative & Positive | Thin Film Circuits Adhesion Layer |
| W | TUNGSTEN ETCH TFW | 140 Å/sec @ 30 °C | Negative | Integrated Circuits |
| SnO | NESA ETCHANT TE-100 |
0.02 micron/min @ 20 °C |
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