Sapphire wafer

Sapphire wafer, Sapphire substrate

▶ Characteristic: - Stability in low & high temperature(melting point : 2400°C) - Superior mechanical properties(Extreme hardness) - High thermal conductivity - High transmittance of light

▶ Application:

- Optical component : Optical flats, window, filter, prisms, aperture,covers for electric cells, laser rods, ect - Sapphire substrate :   For GaN, other III-V & II-VI compound   For IR Detectors   For High TeSuperconductors and High Frequency Dielectrics   For high speed IC’s and pressure transducers   For SOS(Silicon on Sapphire) - Window :   For visible and IR   For inspection plate for high temperature & pressure furnace   For prism, optical plate   For sapphire watch glasses

▶ Specification

Product Sapphire wafer Sapphire substrate(window) Diameter 2", 3", 4", Orientation 0001(C-axis), 1012(R-axis) ± 1°, 0.5°, 0.25°, 0.1° Reference Flat Orientation 1120(A-axis), 1010(M-axis) Reference Flat Length 16±1mm, 22±1mm, 32.5±1mm Secondary Flat Length 8±1mm, 11±1mm, 15±1mm Thickness 330~380um(2"), 430(3"), 435~500um(4") & Adjustable Surface One side polished, Two side polished

 

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